 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSM9915 Elektronische Bauelemente 6.2A, 20V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Description The SSM9915 provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. SOT-223 Features * * * * Simple Drive Requirement Fast Switching Low Gate Charge RoHS Compliant REF. D Date Code 9915 G A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 G D S Millimeter Min. Max. 13TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Ratings 20 12 6.2 5.0 30 3.2 0.025 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 40 Unit o C/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSM9915 Elektronische Bauelemente o 6.2A, 20V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=70 C) Static Drain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 20 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=12V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=4 A o 0.03 _ _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 100 1 25 50 80 8 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs Rg _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Gate Resistance 5 1 2 8 55 10 3 360 70 50 13 0.78 nC ID=10A VDS=16V VGS= 4.5V _ _ _ _ VDD=10V ID=10A nS VGS=5 V RG=3.3[ RD=1 [ 580 _ _ pF VGS=0V VDS=20V f=1.0MHz _ _ _ _ S [ VDS=10V, ID=5A f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time2 Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. 1.3 _ _ Unit V nS nC Test Condition IS=2.5A, VGS=0V. IS=10A, VGS=0V. dl/dt=100A/us 17 9 Qrr _ Notes: 1.Pulse width limited by safe operating area. 300us, dutycycleO2%. 2.Pulse widthO 3. t O10sec.Surface mounted on 1 in2copper pad of FR4 board. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSM9915 Elektronische Bauelemente 6.2A, 20V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSM9915 Elektronische Bauelemente 6.2A, 20V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
Price & Availability of SSM9915
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |